linear & power amplifiers - chip 3 3 - 148 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com gaas hemt mmic medium power amplifier, 50 - 66 ghz v02.0209 general description features functional diagram output ip3: +25 dbm p1db: +17 dbm gain: 24 db supply voltage: +5v 50 ohm matched input/output die size: 3.2 x 1.42 x 0.1 mm electrical speci cations , t a = +25 c, vdd1= vdd2= vdd3= 5v, idd1 + idd2 + idd3= 220 ma [2] typical applications this hmc-abh241 is ideal for: ? short haul / high capacity links ? wireless lan bridges ? military & space the hmc-abh241 is a four stage gaas hemt mmic medium power ampli er which operates between 50 and 66 ghz. the hmc-abh241 provides 24 db of gain, and an output power of +17 dbm at 1db compression from a +5v supply voltage. all bond pads and the die backside are ti/au metallized and the a m p l i e r d e v i c e i s f u l l y p a s s i v a t e d f o r r e l i a b l e o p e r a t i o n . the hmc-abh241 gaas hemt mmic medium power ampli er is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for mcm and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes. hmc-abh241 parameter min. typ. max. units frequency range 50 - 66 ghz gain 19 24 db input return loss 15 db output return loss 15 db output power for 1 db compression (p1db) 17 dbm output third order intercept (ip3) 25 dbm saturated output power (psat) 19 dbm supply current (idd1 + idd2 + idd3) 220 ma [1] unless otherwise indicated, all measurements are from probed die [2] adjust vgg1 = vgg2 = vgg3 between -1v to +0.3v (typ -0.3v) to achieve idd total = 220 ma
linear & power amplifiers - chip 3 3 - 149 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com fixtured output power vs. frequency output return loss vs. frequency linear gain vs. frequency input return loss vs. frequency hmc-abh241 v02.0209 gaas hemt mmic medium power amplifier, 50 - 66 ghz 0 5 10 15 20 25 30 48 50 52 54 56 58 60 62 64 66 68 gain (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 48 50 52 54 56 58 60 62 64 66 68 return loss (db) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 50 52 54 56 58 60 62 64 66 68 70 return loss (db) frequency (ghz) 0 5 10 15 20 25 50 52 54 56 58 60 62 64 66 68 p1db p3db pout (dbm) frequency (ghz)
linear & power amplifiers - chip 3 3 - 150 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc-abh241 v02.0209 gaas hemt mmic medium power amplifier, 50 - 66 ghz outline drawing absolute maximum ratings drain bias voltage +5.5 vdc gain bias voltage -1 to +0.3 vdc rf input power 2 dbm storage temperature -65 c to + 150c chennel temperature +180 c electrostatic sensitive device observe handling precautions notes: 1. all dimensions are in inches [mm]. 2. typical bond pad is .004 square. 3. backside metallization: gold. 4. backside metal is ground. 5. bond pad metallization: gold. 6. connection not required for unlabeled bond pads. 7. overall die size .002 die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
linear & power amplifiers - chip 3 3 - 151 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2, 4, 6, 10, 12, 14 vgg1, vgg2 vgg3 gate control for ampli er. please follow mmic ampli er bias- ing procedure application note. see assembly for required external components. 3, 5, 7, 9, 11, 13 vdd1, vdd2, vdd3 power supply voltage for the ampli er. see assembly for required external components. 8rfout this pad is ac coupled and matched to 50 ohms. die bottom gnd die bottom must be connected to rf/dc ground. pad descriptions hmc-abh241 v02.0209 gaas hemt mmic medium power amplifier, 50 - 66 ghz
linear & power amplifiers - chip 3 3 - 152 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram note 1: bypass caps should be 100 pf (approximately) ceramic (single-layer) placed no farther than 30 mils from the ampli er. note 2: best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output. hmc-abh241 v02.0209 gaas hemt mmic medium power amplifier, 50 - 66 ghz
linear & power amplifiers - chip 3 3 - 153 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic ribbon bond 0.076mm (0.003?) rf ground plane 0.127mm (0.005?) thick alumina thin film substrate figure 1. 0.102mm (0.004?) thick gaas mmic ribbon bond 0.076mm (0.003?) rf ground plane 0.150mm (0.005?) thick moly tab 0.254mm (0.010? thick alumina thin film substrate figure 2. hmc-abh241 v02.0209 gaas hemt mmic medium power amplifier, 50 - 66 ghz
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